FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 1 december 2011 mlp 4.5x5 top bottom 10 9 8 7 3 4 5 6 11 12 2 1 q1 (nch ) q4 (nch) q3 (pch) q2 (pch) d1,d2 to backside d3,d4 to backside (isolated from d1,d2) g1 s1 s1 g2 s2 s2 g4 s4 s4 g3 s3 s3 s2 s1 g2 s2 s1 g1 s3 s4 g3 s3 s4 g4 pin 1 d3/ d4 d3/ d4 d1/ d2 d1/ d2 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter q1/q4 q2/q3 units v ds drain to source voltage 100 -80 v v gs gate to source voltage 20 20 v i d drain current -continuous (package limited) t c = 25 c 6 -6 a -continuous (silicon limited) t c = 25 c 10 -10 -continuous t a = 25 c (note 1a) 3.4 -2.6 -pulsed 12 -10 p d power dissipation for single operation t c = 25 c 22 37 w power dissipation for dual operation t a = 25 c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 50 c/w r ja thermal resistance, junction to ambient (note 1b) 160 device marking device package reel size tape width quantity FDMQ8203 FDMQ8203 mlp4.5x5 13 ? 12 mm 3000 units FDMQ8203 greenbridge tm series of high-efficie ncy bridge rectifiers dual n-channel and dual p-channel powertrench ? mosfet n-channel: 100 v, 6 a, 110 m p-channel: -80 v, -6 a, 190 m features q1/q4: n-channel ? max r ds(on) = 110 m at v gs = 10 v, i d = 3 a ? max r ds(on) = 175 m at v gs = 6 v, i d = 2.4 a q2/q3: p-channel ? max r ds(on) = 190 m at v gs = -10 v, i d = -2.3 a ? max r ds(on) = 235 m at v gs = -4.5 v, i d = -2.1 a ? substantial efficiency benefit in pd solutions ? rohs compliant general description this quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. application ? high-efficiency bridge rectifiers
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics symbol parameter test conditions type min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v i d = -250 a, v gs = 0 v q1/q4 q2/q3 100 -80 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c i d = -250 a, referenced to 25 c q1/q4 q2/q3 72 -79 mv/c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v v ds = -64 v, v gs = 0 v q1/q4 q2/q3 1 -1 a a i gss gate to source leakage current v gs = 20 v, v ds = 0 v q1/q4 q2/q3 100 100 na na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a v gs = v ds , i d = -250 a q1/q4 q2/q3 2 -1 3 -1.6 4 -3 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c i d = -250 a, referenced to 25 c q1/q4 q2/q3 -8 5 mv/c r ds(on) drain to source on resistance v gs = 10 v, i d = 3 a v gs = 6 v, i d = 2.4 a v gs = 10 v, i d = 3 a , t j = 125 c q1/q4 85 118 147 110 175 191 m v gs = -10 v, i d = -2.3 a v gs = -4.5 v, i d = -2.1 a v gs = -10 v, i d = -2.3 a, t j = 125 c q2/q3 161 188 273 190 235 323 g fs forward transconductance v ds = 10 v, i d = 3 a v ds = -10 v, i d = -2.3 a q1/q4 q2/q3 6 6 s c iss input capacitance q1/q4: v ds = 50 v, v gs = 0 v, f = 1 mhz q2/q3: v ds = -40 v, v gs = 0 v, f = 1 mhz q1/q4 q2/q3 158 639 210 850 pf c oss output capacitance q1/q4 q2/q3 41 46 55 65 pf c rss reverse transfer capacitance q1/q4 q2/q3 2.6 24 5 40 pf t d(on) turn-on delay time q1/q4: v dd = 50 v, i d = 3 a, v gs = 10 v, r gen = 6 q2/q3: v dd = -40 v, i d = -2.3 a, v gs = -10 v, r gen = 6 q1/q4 q2/q3 3.8 4.7 10 10 ns t r rise time q1/q4 q2/q3 1.3 2.8 10 10 ns t d(off) turn-off delay time q1/q4 q2/q3 7.5 22 15 35 ns t f fall time q1/q4 q2/q3 1.9 2.7 10 10 ns q g total gate charge vgs = 0 v to 10 v vgs = 0 v to -10 v q1/q4: v dd = 50 v, i d = 3 a q2/q3: v dd = -40 v, i d = -2.3a q1/q4 q2/q3 2.9 13 5 19 nc q g total gate charge vgs = 0 v to 5 v vgs = 0 v to -4.5 v q1/q4 q2/q3 1.6 6.4 3 10 nc q gs gate to source gate charge q1/q4 q2/q3 0.8 1.6 nc q gd gate to drain ?miller? charge q1/q4 q2/q3 0.8 2.6 nc
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 3 electrical characteristics t j = 25 c unless otherwise noted drain-source diod e characteristics symbol parameter test conditions type min typ max units v sd source to drain diode forward voltage v gs = 0 v, i s = 3 a (note 2) v gs = 0 v, i s = -2.3 a (note 2) q1/q4 q2/q3 0.86 -0.82 1.3 -1.3 v t rr reverse recovery time q1/q4: i f = 3 a, di/dt = 100 a/ s q2/q3: i f = -2.3 a, di/dt = 100 a/ s q1/q4 q2/q3 32 26 52 42 ns q rr reverse recovery charge q1/q4 q2/q3 21 26 34 42 nc notes: 1: r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 300 s, duty cycle < 2.0%. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper, the board designed q1+q3 or q2+q4. 160 c/w when mounted on a minimum pad of 2 oz copper, the board designed q1+q3 or q2+q4. a. b.
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 4 typical characteristics (n-channel) t j = 25 c unless otherwise noted figure 1. 012345 0 3 6 9 12 v gs = 7 v v gs = 10 v v ds , drain to source voltage (v) i d , drain current (a) v gs = 5 v v gs = 6 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max on region characteristics f i g u r e 2 . 03691 2 0 1 2 3 4 5 v gs = 8 v v gs = 10 v v gs = 7 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 5 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = 3 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 0 100 200 300 400 t j = 125 o c i d = 3 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 234567 0 3 6 9 12 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 20 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 5 figure 7. 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 i d = 3 a v dd = 75 v v dd = 25 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 50 v gate charge characteristics figure 8. 0.1 1 10 100 1 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. forward bias safe operating area 0.1 1 10 100 300 0.005 0.01 0.1 1 10 20 10 s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 160 o c/w t a = 25 o c figure 10. typical characteristics (n-channel) t j = 25 c unless otherwise noted
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 6 typical characteristics (p-channel) t j = 25 o c unlenss otherwise noted 012345 0 2 4 6 8 10 v gs = -2.5 v v gs = -3 v v gs = -4.5 v v gs = -10 v v gs = -3.5 v pulse duration = 80 p s duty cycle = 0.5% max -i d , drain current (a) -v ds , drain to source voltage (v) figure 10. on-region characteristics 0246810 0 1 2 3 4 v gs = -2.5 v v gs = -4.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance - i d , drain current (a) v gs = -3.5 v v gs = -10 v v gs = -3 v figure 11. normalized on-resistance vs drain current and gate voltage figure 12. normalized on-resistance vs junction temperature -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i d = - 2.3 a v gs = - 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) 24681 0 0 100 200 300 400 500 600 pulse duration = 80 p s duty cycle = 0.5% max t j = 125 o c t j = 25 o c i d = -2.3 a r ds(on) , drain to source on-resistance ( m : ) -v gs , gate to source voltage (v) figure 13. on-resistance vs gate to source voltage figure 14. transfer characteristics 12345 0 2 4 6 8 10 t j = 25 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 15. source to drain diode forward voltage vs source current 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v)
typical characteristics (p-channel) t j = 25 o c unlenss otherwise noted figure 16. gate charge characteristics 02468101214 0 2 4 6 8 10 i d = -2.3 a v dd = -12 v v dd = -10 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -8 v 0.1 1 10 100 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss figure 17. capacitance vs drain to source voltage f igure 18. forward bias safe operating area 0.1 1 10 100 300 0.005 0.01 0.1 1 10 20 10 s 10 ms dc 1 s 100 ms 1 ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 160 o c/w t a = 25 o c FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 7
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 8 typical characteristics t j = 25 o c unlenss otherwise noted figure 19. single pulse maximum power dissipation figure 20. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 1000 2000 p (pk) , peak transient power (w) single pulse r ja = 160 o c/w t a = 25 o c t, pulse width (sec) 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.0005 0.001 0.01 0.1 1 2 single pulse r ja = 160 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a
FDMQ8203 dual n-channel and dual p-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDMQ8203 rev.c1 www.fairchildsemi.com 9 dimensional outlin e and pad layout
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